| PART |
Description |
Maker |
| STP110N55F6 |
N-channel 55 V, 4.5 mOhm typ., 110 A STripFET F6 Power MOSFET in a TO-220 package
|
ST Microelectronics
|
| STP240N10F7 |
N-channel 100 V, 2.5 mOhm typ., 180 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in a TO-220 package
|
ST Microelectronics
|
| STB18NF30 |
Automotive-grade N-channel 330 V, 160 mOhm typ., 18 A STripFET(TM) II Power MOSFET in a D2PAK package
|
ST Microelectronics
|
| STH310N10F7-6 |
N-channel 100 V, 1.9 mOhm typ., 180 A STripFET(TM) VII DeepGATE(TM) Power MOSFET in H2PAK-6 package
|
ST Microelectronics
|
| STL50N25N3LLH5 |
Dual N-channel 30 V, 6 mOhm typ., 14.6 A STripFET(TM) V Power MOSFET in PowerFLAT(TM) 5x6 asymmetrical double island package
|
ST Microelectronics
|
| STH320N4F6-2 STH320N4F6-6 |
Automotive switching applications
N-channel 40 V, 1.1 mOhm typ., 200 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in H2PAK-2 package
|
STMicroelectronics
ST Microelectronics
|
| STL8DN6LF3 |
Automotive-grade dual N-channel 60 V, 22.5 m typ., 7.8 A STripFET III Power MOSFET in a PowerFLAT 5x6 double island package
Automotive-grade dual N-channel 60 V, 22.5 mOhm typ., 7.8 A STripFET(TM) III Power MOSFET in PowerFLAT(TM) 5x6 double island package
|
STMicroelectronics
ST Microelectronics
|
| S8119 |
MOSFET, Switching; VDSS (V): 60; ID (A): 1.5; Pch : 0.8; RDS (ON) typ. (ohm) @10V: -; RDS (ON) typ. (ohm) @4V[4.5V]: [0.173]; RDS (ON) typ. (ohm) @2.5V: 0.207; Ciss (pF) typ: 200; toff (µs) typ: 0.035; Package: MPAK 图片集成电路光开
|
Hamamatsu Photonics K.K.
|
| S7686 |
MOSFET, Switching; VDSS (V): -60; ID (A): -5; Pch : 20; RDS (ON) typ. (ohm) @10V: 0.14; RDS (ON) typ. (ohm) @4V[4.5V]: 0.2; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: -; toff (µs) typ: 10.8; Package: DPAK (L)- (2)
|
Hamamatsu Photonics
|
| STL40C30H3LL |
N-channel 30 V, 0.019 Ohm typ., 10 A, P-channel 30 V, 0.024 Ohm typ., 8 A STripFET(TM) V Power MOSFET in a PowerFLAT(TM) 5x6 d. i. package
|
ST Microelectronics
|
| SG200 MC07XSF517 |
Triple 7.0 mOhm and Dual 17 mOhm High-Side Switch
|
Freescale Semiconductor, Inc
|
| FCH22N60N |
N-Channel SupreMOSMOSFET 600V, 22A, 165m
Ultra Low Gate Charge (Typ. Qg = 45 nC), Low Effective Output Capacitance (Typ. Coss.eff = 196.4 pF)
|
Fairchild Semiconductor
|
